features ? super high dense cell design for low r ds(on) ? rugged and reliable. ? sop-8 package. ? pb free. product summary v ds (v) i d (a) r ds(on) (m ? ) max -30v -5.3a 46 @v gs = 10v 78 @v gs = 4.5v sop-8 absolute maxi mum ratings (ta = 25 0 c unless otherwise noted) parameter symbol limit unit drain-source voltage v ds -30 v gate-source voltage v gs 20 v drain current-continuous a @tj=125 - pulse d b i d -5.3 a i dm -24 a drain-source diode forward current a i s -1.7 a a maximum power dissipation a p d 2.5 w operating junction and storage temperature range t j ,t stg -55 to 150 HT4953 1 of 4 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
thermal characteristics thermal resistance, junction-to ambient a rth j a 50 /w electrical c haracteristics (ta = 25 unless otherwise noted) parameter symbol condition min typ max unit off characteristics drain-source breakdown voltage bv dss v gs =0v,i d =-250a -30 v zero gate voltage drain current i dss v ds =-24v,v gs =0v -1 a gat e -bod y leaka ge i gss v gs =20v , v ds =0v 100 n a on characteritics gate threshold voltage v gs (th) v ds =v gs ,i d =-250a -1 -1.5 -2.5 v drain-source on-state resistance r ds(on) v gs =-10v,i d =-5.6a 46 55 m ? v gs =-4.5v,i d =-4.2a 78 85 forward transconductance ~ fs v gs =-5v,i d =-5.6a 5 s daynamic characteristics input capacitance c iss v ds =-15v,v gs =0v f=1.0mh z 582 pf output capacitance c oss 125 pf reverse transfer capacitance c rss 86 pf switching characterisistics turn-on delay time t d(on) v dd =-15v i d =-5.3a, v gen =-4.5v r l =10ohm r gen =10oh m 9 ns rise time tr 10 ns turn-off delay time t d(off) 38 ns fall time tf 23 ns total gate charge q~ v ds =-15v,i d =-1a v gs =-10v 11.7 nc gate-source charge q~s 2.1 nc gate-drain charge q~d 2.9 nc HT4953 2 of 4 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
electrical c haracteristics (ta = 25 unless otherwise noted) parameter symbol condition min typ max unit drain-source diode characteristics diode forward voltage v sd v gs =0v,i s =-1.7a -0.84 -1.2 v notes a. surface mounted on fr4 board, t Q 10sec b. pulse test: pulse width Q 300us, duty cycle Q 2 % c. guaranteed by design, not s ubject to production testing. HT4953 3 of 4 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
HT4953 4 of 4 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
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